FDS6673AZ datasheet, mosfet equivalent, Fairchild Semiconductor

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FDS6673AZ Datasheet

Features and benefits

*
  –14.5 A,
  –30 V. RDS(ON) = 7.2 mΩ @ VGS =
  –10 V RDS(ON) = 11 mΩ @ VGS =
  – 4.5 V
* Extended VGSS r.

Application

* ESD protection diode (note 3)
* High performance trench technology for extremely low RDS(ON)
* High power .

Description

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate.

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